vishay tlz... document number 85635 rev. 1.8, 04-feb-04 vishay semiconductors www.vishay.com 1 17205 silicon epitaxial planar zener - diodes features ? very sharp reverse characteristic low reverse current level very high stability low noise high reliability applications voltage stabilization mechanical data case: minimelf glass case (sod-80) weight: approx. 50 mg packaging codes/ options: gs18/ 10 k per 13" reel (8 mm tape), 10 k/box gs08/ 2.5 k per 7" reel (8 mm tape), 12.5 k/box absolute maximum ratings t amb = 25 c, unless otherwise specified thermal characteristics t amb = 25 c, unless otherwise specified electrical characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol value unit power dissipation r thja 300 k/w p tot 500 mw z-current i z p tot /v z ma junction temperature t j 175 c storage temperature range t stg - 65... + 175 c parameter test condition symbol value unit junction ambient on pc board 50 mm x 50 mm x 1.6 mm r thja 500 k/w parameter test condition symbol min ty p. max unit forward voltage i f = 200 ma v f 1.5 v
www.vishay.com 2 document number 85635 rev. 1.8, 04-feb-04 vishay tlz... vishay semiconductors electrical characteristics partnumber marking code zener voltage dynamic resistance test current reverse leakage current v z @ i zt z z @ i zt z zk @ i zk i zt i zk i r @ v r v v ? ? ma ma a v min max max max max tlz2v4 2v4 2.33 2.63 tlz2v4a 2a4 2.33 2.52 100 2000 20 1 70 1 tlz2v4b 2b4 2.43 2.63 100 2000 20 1 70 1 tlz2v7 2v7 2.54 2.91 tlz2v7a 2a7 2.54 2.75 100 1000 20 1 50 1 tlz2v7b 2b7 2.69 2.91 100 1000 20 1 50 1 tlz3v0 3v0 2.85 3.22 tlz3v0a 3a0 2.85 3.07 80 1000 20 1 50 1 tlz3v0b 3b0 3.01 3.22 80 1000 20 1 10 1 tlz3v3 3v3 3.16 3.53 tlz3v3a 3a3 3.16 3.38 70 1000 20 1 10 1 tlz3v3b 3b3 3.32 3.53 70 1000 20 1 10 1 tlz3v6 3v6 3.455 3.845 tlz3v6a 3a6 3.455 3.695 60 1000 20 1 5 1 tlz3v6b 3b6 3.6 3.845 60 1000 20 1 5 1 tlz3v9 3v9 3.74 4.16 tlz3v9a 3a9 3.74 4.01 50 1000 20 1 3 1 tlz3v9b 3b9 3.89 4.16 50 1000 20 1 3 1 tlz4v3 4v3 4.04 4.57 tlz4v3a 4a3 4.04 4.29 40 1000 20 1 3 1 tlz4v3b 4b3 4.17 4.43 40 1000 20 1 3 1 tlz4v3c 4c3 4.3 4.57 40 1000 20 1 3 1 tlz4v7 4v7 4.44 4.93 tlz4v7a 4a7 4.44 4.68 25 900 20 1 10 2 tlz4v7b 4b7 4.55 4.8 25 900 20 1 6 2 tlz4v7c 4c7 4.68 4.93 25 900 20 1 3 2 tlz5v1 5v1 4.81 5.37 tlz5v1a 5a1 4.81 5.07 20 800 20 1 2 2 tlz5v1b 5b1 4.94 5.2 20 800 20 1 2 2 tlz5v1c 5c1 5.09 5.37 20 800 20 1 2 2 tlz5v6 5v6 5.28 5.91 tlz5v6a 5a6 5.28 5.55 13 500 20 1 1 2 tlz5v6b 5b6 5.45 5.73 13 500 20 1 1 2 tlz5v6c 5c6 5.61 5.91 13 500 20 1 1 2 TLZ6V2 6v2 5.78 6.44 TLZ6V2a 6a2 5.78 6.09 10 300 20 1 3 4 TLZ6V2b 6b2 5.96 6.27 10 300 20 1 3 4 TLZ6V2c 6c2 6.12 6.44 10 300 20 1 3 4 tlz6v8 6v8 6.29 7.01 tlz6v8a 6a8 6.29 6.63 8 150 20 0.5 2 4 tlz6v8b 6b8 6.49 6.83 8 150 20 0.5 2 4 tlz6v8c 6c8 6.66 7.01 8 150 20 0.5 2 4 tlz7v5 7v5 6.85 7.67 tlz7v5a 7a5 6.85 7.22 8 120 20 0.5 3 6.5
vishay tlz... document number 85635 rev. 1.8, 04-feb-04 vishay semiconductors www.vishay.com 3 tlz7v5b 7b5 7.07 7.45 8 120 20 0.5 3 6.73 tlz7v5c 7c5 7.29 7.67 8 120 20 0.5 3 6.93 tlz8v2 8v2 7.53 8.45 tlz8v2a 8a2 7.53 7.92 8 120 20 0.5 7.5 7.15 tlz8v2b 8b2 7.78 8.19 8 120 20 0.5 7.5 7.39 tlz8v2c 8c2 8.03 8.45 8 120 20 0.5 7.5 7.63 tlz9v1 9v1 8.29 9.3 tlz9v1a 9a1 8.29 8.73 8 120 20 0.5 0.04 7.88 tlz9v1b 9b1 8.57 9.01 8 120 20 0.5 0.04 8.14 tlz9v1c 9c1 8.83 9.3 8 120 20 0.5 0.04 8.39 tlz10 10 9.12 10.44 tlz10a 10a 9.12 9.59 8 120 20 0.5 0.04 8.66 tlz10b 10b 9.41 9.9 8 120 20 0.5 0.04 8.94 tlz10c 10c 9.7 10.2 8 120 20 0.5 0.04 9.22 tlz10d 10d 9.94 10.44 8 120 20 0.5 0.04 9.44 tlz11 11 10.18 11.38 tlz11a 11a 10.18 10.71 10 120 10 0.5 0.04 9.67 tlz11b 11b 10.5 11.05 10 120 10 0.5 0.04 9.98 tlz11c 11c 10.82 11.38 10 120 10 0.5 0.04 10.28 tlz12 12 11.13 12.35 tlz12a 12a 11.13 11.71 12 110 10 0.5 0.04 10.6 tlz12b 12b 11.44 12.03 12 110 10 0.5 0.04 10.9 tlz12c 12c 11.74 12.35 12 110 10 0.5 0.04 11.2 tlz13 13 12.11 13.66 tlz13a 13a 12.11 12.75 14 110 10 0.5 0.04 11.5 tlz13b 13b 12.55 13.21 14 110 10 0.5 0.04 11.9 tlz13c 13c 12.99 13.66 14 110 10 0.5 0.04 12.3 tlz15 15 13.44 15.09 tlz15a 15a 13.44 14.13 16 110 10 0.5 0.04 12.8 tlz15b 15b 13.89 14.62 16 110 10 0.5 0.04 13.2 tlz15c 15c 14.35 15.09 16 110 10 0.5 0.04 13.6 tlz16 16 14.8 16.51 tlz16a 16a 14.8 15.57 18 150 10 0.5 0.04 14.1 tlz16b 16b 15.25 16.04 18 150 10 0.5 0.04 14.5 tlz16c 16c 15.69 16.51 18 150 10 0.5 0.04 14.9 tlz18 18 16.22 18.33 tlz18a 18a 16.22 17.06 23 150 10 0.5 0.04 15.4 tlz18b 18b 16.82 17.7 23 150 10 0.5 0.04 16 tlz18c 18c 17.42 18.33 23 150 10 0.5 0.04 16.5 tlz20 20 18.02 20.72 tlz20a 20a 18.02 18.96 28 200 10 0.5 0.04 17.1 tlz20b 20b 18.63 19.59 28 200 10 0.5 0.04 17.7 tlz20c 20c 19.23 20.22 28 200 10 0.5 0.04 18.3 tlz20d 20d 19.72 20.72 28 200 10 0.5 0.04 18.7 tlz22 22 20.15 22.63 tlz22a 22a 20.15 21.2 30 200 5 0.5 0.04 19.1 tlz22b 22b 20.64 21.71 30 200 5 0.5 0.04 19.6 tlz22c 22c 21.08 22.17 30 200 5 0.5 0.04 20 partnumber marking code zener voltage dynamic resistance test current reverse leakage current v z @ i zt z z @ i zt z zk @ i zk i zt i zk i r @ v r v v ? ? ma ma a v min max max max max
www.vishay.com 4 document number 85635 rev. 1.8, 04-feb-04 vishay tlz... vishay semiconductors tlz22d 22d 21.52 22.63 30 200 5 0.5 0.04 20.4 tlz24 24 22.05 24.85 tlz24a 24a 22.05 23.18 35 200 5 0.5 0.04 20.9 tlz24b 24b 22.61 23.77 35 200 5 0.5 0.04 21.5 tlz24c 24c 23.12 24.31 35 200 5 0.5 0.04 22 tlz24d 24d 23.63 24.85 35 200 5 0.5 0.04 22.4 tlz27 27 24.26 27.64 tlz27a 27a 24.26 25.52 45 250 5 0.5 0.04 23 tlz27b 27b 24.97 26.26 45 250 5 0.5 0.04 23.7 tlz27c 27c 25.63 26.95 45 250 5 0.5 0.04 24.3 tlz27d 27d 26.29 27.64 45 250 5 0.5 0.04 25 tlz30 30 26.99 30.51 tlz30a 30a 26.99 28.39 55 250 5 0.5 0.04 25.6 tlz30b 30b 27.7 29.13 55 250 5 0.5 0.04 26.3 tlz30c 30c 28.36 29.82 55 250 5 0.5 0.04 26.9 tlz30d 30d 29.02 30.51 55 250 5 0.5 0.04 27.6 tlz33 33 29.68 33.11 tlz33a 33a 29.68 31.22 65 250 5 0.5 0.04 28.2 tlz33b 33b 30.32 31.88 65 250 5 0.5 0.04 28.8 tlz33c 33c 30.9 32.5 65 250 5 0.5 0.04 29.4 tlz33d 33d 31.49 33.11 65 250 5 0.5 0.04 29.9 tlz36 36 32.14 35.77 tlz36a 36a 32.14 33.79 75 250 5 0.5 0.04 30.5 tlz36b 36b 32.79 34.49 75 250 5 0.5 0.04 31.2 tlz36c 36c 33.4 35.13 75 250 5 0.5 0.04 31.7 tlz36d 36d 34.01 35.77 75 250 5 0.5 0.04 32.3 tlz39 39 34.68 40.8 tlz39a 39a 34.68 36.47 85 250 5 0.5 0.04 32.9 tlz39b 39b 35.36 37.19 85 250 5 0.5 0.04 33.6 tlz39c 39c 36 37.85 85 250 5 0.5 0.04 34.2 tlz39d 39d 36.63 38.52 85 250 5 0.5 0.04 34.8 tlz39e 39e 37.36 39.29 85 250 5 0.5 0.04 35.5 tlz39f 39f 38.14 40.11 85 250 5 0.5 0.04 36.2 tlz39g 39g 38.94 40.8 85 250 5 0.5 0.04 37 tlz43 43 40 45 90 - 5 - 0.04 38 tlz47 47 44 49 90 - 5 - 0.04 41.8 tlz51 51 48 54 100 - 5 - 0.04 45.6 tlz56 56 53 60 100 - 5 - 0.04 50.4 partnumber marking code zener voltage dynamic resistance test current reverse leakage current v z @ i zt z z @ i zt z zk @ i zk i zt i zk i r @ v r v v ? ? ma ma a v min max max max max
vishay tlz... document number 85635 rev. 1.8, 04-feb-04 vishay semiconductors www.vishay.com 5 typical characteristics (t amb = 25 c unless otherwise specified) figure 1. total power dissipation vs. ambient temperature figure 2. typical change of working voltage under operating conditions at t amb =25c figure 3. typical change of working voltage vs. junction temperature 0 40 80 120 160 0 100 300 400 500 600 p ?total power dissipation ( mw) tot t amb ? ambient t emperature(c ) 200 95 9602 200 0 5 10 15 20 1 10 100 1000 v ?voltagechange( mv ) z v z ? z-voltag e(v) 25 95 9598 i z =5ma t j =25c ?60 0 60 120 180 0.8 0.9 1.0 1.1 1.2 1.3 v ? relative voltagechange ztn t j ? junction temperature (c ) 240 95 9599 v ztn =v zt /v z (25c) tk vz =10 x 10 ?4 /k 8x10 ?4 /k ?4 x 10 ?4 /k 6x10 ?4 /k 4x10 ?4 /k 2x10 ?4 /k ?2 x 10 ?4 /k 0 figure 4. temperature coefficient of vz vs. z-voltage figure 5. diode capacitance vs. z-voltage figure 6. forward current vs. forward voltage 0102030 ?5 0 5 10 15 tk ?temperature coefficient of v ( 10 /k) vz v z ? z-voltag e(v) 50 95 9600 40 z ?4 i z =5ma 0 5 10 15 0 50 100 150 200 c ? diode capacitance ( pf ) d v z ? z-voltag e(v) 25 95 9601 20 t j =25c v r =2v 0 0.2 0.4 0.6 0.8 0.001 0.01 0.1 1 10 100 1.0 95 9605 i ? forward current ( ma) f v f ? forward voltag e(v) t j =25c
www.vishay.com 6 document number 85635 rev. 1.8, 04-feb-04 vishay tlz... vishay semiconductors figure 7. z-current vs. z-voltage figure 8. z-current vs. z-voltage 04 81216 20 95 9604 0 20 40 60 80 100 i ? z-current ( ma) z v z ? z-voltag e(v) p tot =500mw t amb =25c 15 20 25 30 0 10 20 30 40 50 i ? z-current ( ma) z v z ? z-voltag e(v) 35 95 9607 p tot =500mw t amb =25c figure 9. differential z-resistance vs. z-voltage 0 5 10 15 20 1 10 100 1000 r ? differential z-resistance ( ? ) z v z ? z-voltag e(v) 25 95 9606 t j =25c i z =1ma 5ma 10ma 1 10 100 1000 z ?thermalresistance for pulsecond.(k/w ) thp t p ? pulse length ( ms ) 95 9603 10 ?1 10 0 10 1 10 2 t p /t=0.5 t p /t=0.2 t p /t=0.1 t p /t=0.05 t p /t=0.02 t p /t=0.01 single pulse r thja =300k/w t=t jmax ?t amb i zm =(?v z +(v z 2 +4r zj t/z thp ) 1/2 )/(2r zj ) x figure 10. thermal response
vishay tlz... document number 85635 rev. 1.8, 04-feb-04 vishay semiconductors www.vishay.com 7 marking voltage group remark: the zener voltage tlz2v4 or zener voltage group tlz2v4a is printet with max 3 digits 3 times on the surface. the marking should be readable at minimum 2 times. the third print is allowed to be incomplete due to tolerances in diameter of the glassbody. package dimensions in mm (inches) 2v4 2v4 2v4 2v4 2a4 2a4 2a4 2a4 tlz2v4a tlz2v4 18660 96 12070 3.5 0.2 (0.14 0.008) 0.47 max. (0.02) 1.5 0.1 (0.06 0.004) cathode indification glass case mini melf / sod 80 jedec do 213 aa technical drawings according to din specifications max min min ref 17404 2.50 (0.098) 5.00 (0197) 1.25 (0.049) 2.00 (0.079)
www.vishay.com 8 document number 85635 rev. 1.8, 04-feb-04 vishay tlz... vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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